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Brand Name : onsemi
Model Number : NTR4170NT1G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1 - 3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Mounting Type : Surface Mount
Vgs (Max) : ±12V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
Rds On (Max) @ Id, Vgs | 55mOhm @ 3.2A, 10V | |
Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 4.76 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 432 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 480mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Package / Case |
The NTR4170NT1G is a P-channel enhancement mode Field-Effect Transistor (FET) designed for high-efficiency discrete and integrated load switching and low-side power management applications. It is housed in a compact TO-236-3 surface mount package with an industry standard pinout, allowing for easy drop-in replacement in existing designs.
The device utilizes a vertical DMOS structure with a high cell density for optimum performance and low on-resistance. It offers a low gate-charge and fast switching speeds for excellent circuit efficiency. The NTR4170NT1G is designed to operate with a wide range of gate drive voltages and is ideally suited for switching applications up to 30V. The device is RoHS compliant and 100% lead (Pb) free.
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NTR4170NT1G MOSFET Power Electronics TO-236-3 Transistor for High Current Switching Applications Images |