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Brand Name : onsemi
Model Number : FDC658AP
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Vgs (Max) : ±25V
Single P-Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® FDC658AP MOSFET Power Electronics Single P-Channel POWERTRENCH Logic Level -30 V -4 A 50 m
P-Channel 1.8V Specified PowerTrench MOSFET–20 V, –0.83 A, 0.5 Ω
–20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 4A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 5 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SuperSOT™-6 | |
Package / Case |
General Description
This P−Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process. It has been optimized for battery
power management applications.
Features
• Max RDS(on) = 50 m @ VGS = −10 V, ID = −4 A
• Max RDS(on) = 75 m @ VGS = −4.5 V, ID = −3.4 A
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• Pb−Free, Halide Free and RoHS Compliant
Applications
• Battery Management
• Load Switch
• Battery Protection
• DC−DC Conversion
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FDC658AP MOSFET Power Electronics Single P-Channel POWERTRENCH Logic Level -30 V -4 A 50 m Images |