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Brand Name : onsemi
Model Number : NTMFS4C55NT1G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 11.9A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30 nC @ 10 V
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 770mW (Ta), 33W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case |
ON Semiconductor NTMFS4C55NT1G MOSFET Power Electronics
Product Overview:
The NTMFS4C55NT1G is a MOSFET power electronic device from ON Semiconductor. It is designed to handle both high voltage and high current applications, and is a cost-effective solution for a wide range of power electronics applications.
Features:
• 4A, 55V, N-Channel Power MOSFET
• Low gate charge and low RDS(on)
• Fast switching capability
• High avalanche energy capability
• RoHS compliant
Specifications:
• VDSS: 55V
• ID: 4A
• RDS(on): 0.011Ω
• Qg: 7nC
• Qgs: 2.2nC
• Qgd: 1.8nC
• Package: SOT-23
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ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance Images |