NTMFS4C020NT1G MOSFET Power Electronics
Product Description:
The NTMFS4C020NT1G MOSFET Power Electronics is a N-Channel MOSFET designed to provide reliable performance in a wide range of power electronics applications. This device has an on-resistance of 4.9 mΩ and a maximum drain-source voltage of 20 V. It features an integrated ESD protection, and is available in an ultra-small SOT-23 package.
Product Parameters:
- Package Type: SOT-23
- On-Resistance: 4.9 mΩ
- Maximum Drain-Source Voltage: 20 V
- Maximum Gate-Source Voltage: ±8 V
- Maximum Continuous Drain Current: 0.9 A
- Maximum Drain-Source On-State Resistance: 4.9 mΩ
- Maximum Power Dissipation: 2.1 W
- Operating Temperature Range: -55°C to +150°C
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Common Power Mosfet NTMFS4C020NT1G 20V 4A P Channel MOSFET Surface Mount Images
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