IRFB7730PBF MOSFET Power Electronics:
Features:
-100V N-Channel MOSFET
-Typical RDS(on) = 0.052Ohm
-Low gate charge (Qg)
-Low Crss
-AEC-Q101 Qualified
Applications:
-Power Switching
-Battery Protection
-DC-DC Converters
-High Current Load Switching
-High Side Load Switching
-General Purpose Switching
Parameters:
-Drain-Source Voltage: 100V
-Continuous Drain Current: 56A
-Power Dissipation: 0.8W
-Gate-Source Voltage: ±20V
-RDS(on): 0.052Ohm
-Qg Total Gate Charge: 28nC
-Transconductance: 16.2 S
-Input Capacitance: 590pF
-Package/Case: TO-220AB
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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IRFB7730PBF Power Mosfet High Voltage And High Current Capability Images
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