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BSC070N10NS5 MOSFET Power Electronics Low Gate Charge N Channel Mosfet

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BSC070N10NS5 MOSFET Power Electronics Low Gate Charge N Channel Mosfet

Brand Name : Infineon Technologies

Model Number : BSC070N10NS5

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain-Source Voltage (Vdss) : 700V

Gate-Source Voltage (Vgs : ± 20 V

Drain Current (Id) : 70A

Drain-Source On-Resistance (Rds) : 0.025 ohm

Drain-Source On-Resistance (RDS(on)) : 7mΩ

Maximum Junction Temperature (Tj) : 175°C

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BSC070N10NS5 MOSFET Power Electronic Device High Performance and Reliable Power Switching Solution

N-channel MOSFET, BSC070N10NS5

Product Description:

The BSC070N10NS5 is a high-speed, high-voltage N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switching, power supplies, DC-DC converters, and other high-frequency applications.

Features:

- N-channel MOSFET
- High-speed switching
- Low drain-source on-resistance
- Low gate charge
- Low output capacitance
- Fast switching times
- Low gate-to-drain charge

Specifications:

- Part Number: BSC070N10NS5
- Configuration: N-Channel
- Drain-Source Voltage (Vdss): 700 V
- Gate-Source Voltage (Vgs): ± 20 V
- Drain Current (Id): 70 A
- Drain-Source On-Resistance (Rds): 0.025 ohm
- Maximum Power Dissipation

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BSC070N10NS5 MOSFET Power Electronics Low Gate Charge N Channel Mosfet


Product Tags:

Low Gate Charge MOSFET Power Electronics

      

BSC070N10NS5

      
China BSC070N10NS5 MOSFET Power Electronics Low Gate Charge N Channel Mosfet wholesale

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