SQJ488EP-T1-BE3 MOSFET Power Electronics
Ultra-Low On-Resistance High Efficiency and Reliability
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
Product Description: This MOSFET is a N-channel enhancement mode power field effect transistor designed for high current and low voltage applications.
Features and Benefits:
• High current capability
• Low on-resistance
• Fast switching speed
• Improved power and thermal performance
Specifications:
• Drain-Source Voltage (VDS): 40V
• Drain-Source On-Resistance (RDS(on)): 0.7Ω
• Gate-Source Voltage (VGS): ±20V
• Power Dissipation (PD): 88W
• Transconductance (gm): 26.4S
• Operating Temperature: -55°C to +150°C
• Mounting Type: Through Hole
• Package/Case: TO-220AB
• Supplier Device Package: TO-220AB
• Polarity: N-Channel
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• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
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Service >>>
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SQJ488EP-T1-BE3 Integrated Circuit Chip 40V Ultra Low On Resistance Images
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