IRFB3806PBF MOSFET Power Transistor High Voltage High Current Switching Device
Parameters:
• Drain-Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 66A
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 10V, 33A
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) @ Vgs: 47nC @ 10V
• Input Capacitance (Ciss) @ Vds: 2800pF @ 25V
• FET Type: N-Channel
• Power Dissipation (Pd) @ Ta: 300W
• Operating Temperature: -55°C to 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-220-3
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IRFB3806PBF MOSFET Power Transistor High Voltage High Current Switching Device Images
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