SIHG33N60EF-GE3 600V N-Channel Power MOSFET
Product Features:
- 600V N-Channel Power MOSFET
- High Power and Low Gate Charge
- Low On-Resistance
- Low Input Capacitance
- Low Output Capacitance
- Low Leakage Current
- High Speed Switching
Specifications:
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±20V
- Drain Current (ID): 33A
- Drain-Source On-Resistance (RDS(on)): 0.006 Ω
- Maximum Power Dissipation (PD): 157W
- Maximum Junction Temperature (TJ): 150°C
- Operating Junction Temperature (TJ): -55°C to 150°C
- Storage Temperature Range (TSTG): -55°C to 150°C
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.
|
|
SIHG33N60EF-GE3 High-Performance MOSFET Power Electronics With Superior Efficiency And Reliability Images
|
