IRFH6200TRPBF MOSFET Power Electronics High Voltage High Current Low On Resistance
The IRFH6200TRPBF from Infineon is a single N-channel HEXFET® power MOSFET in a TO-220AB package. It is a high-side MOSFET featuring low gate charge and low on-resistance, making it ideal for use in high frequency switching applications. This MOSFET has a drain-source voltage of 30V, a current rating of 4.2A and a maximum power dissipation of 18W. It has a fast switching speed of 4.3nC and a gate threshold voltage of 1.4V. This MOSFET has an operating temperature range of -55°C to +175°C.
This N-Channel MOSFET from International Rectifier has a maximum drain source voltage of 60V, a continuous drain current of 20A, and a maximum power dissipation of 225W. It features a fast switching speed and a low on-resistance of 4.3mΩ. The device can be used in a wide range of applications such as power management, motor control, and audio amplifiers.
Features:
• Maximum drain source voltage: 60V
• Continuous drain current: 20A
• Maximum power dissipation: 225W
• Fast switching speed
• Low on-resistance: 4.3mΩ
• Suitable for motor control, power management, and audio amplifiers
• RoHS Compliant
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