IRFU7N60C3 MOSFET Power Electronics High
Performance High Current High Efficiency Switching
Product description:
The IRFU7N60C3 is a high performance, low gate charge MOSFET offering excellent switching performance. It is designed for high frequency switching applications, providing superior on-state and switching performance.
Parameters:
• VDS - Drain-Source Voltage: 600V
• ID - Continuous Drain Current: 7A
• RDS(on) - Drain-Source On-State Resistance: 0.02 Ω
• VGS - Gate-Source Voltage: ±20V
• Qg - Gate Charge: 16.2 nC
• Ciss - Input Capacitance: 990pF
• Coss - Output Capacitance: 112pF
• Crss - Reverse Transfer Capacitance: 32pF
• Pd - Power Dissipation: 8.2W
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IRFU7N60C3 MOSFET Power Electronics High Performance High Current High Efficiency Switching Images
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