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NTMFS5C673NLT1G MOSFET Power Electronics 8-PowerTDFN High Speed Ultra Resistance Gate Charge

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NTMFS5C673NLT1G MOSFET Power Electronics 8-PowerTDFN High Speed Ultra Resistance Gate Charge

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Brand Name : onsemi

Model Number : NTMFS5C673NLT1G

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1 - 3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Mounting Type : Surface Mount

Vgs (Max) : ±20V

Operating Temperature : -55°C ~ 150°C (TJ)

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NTMFS5C673NLT1G MOSFET Power
Electronics 8-PowerTDFN High Speed Ultra Resistance Gate Charge

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 46W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case

The NTMFS5C673NLT1G is a high-performance, low-voltage Trench MOSFET with an integrated driver. It provides a wide range of voltage and current control, with an operating voltage range of 4.5V to 20V and a continuous drain current rating of 6.7A. The device is offered in an 8-PowerTDFN package, which is designed to minimize power loss and optimize thermal performance. It also features low on-resistance and fast switching times, making it ideal for high-efficiency power conversion applications such as DC-DC converters, motor control, and lighting systems.

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NTMFS5C673NLT1G MOSFET Power Electronics 8-PowerTDFN High Speed Ultra Resistance Gate Charge


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