NTD4858NT4G TO-252-3 MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V

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Shenzhen Sai Collie Technology Co., Ltd.

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NTD4858NT4G TO-252-3 MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V

Name: NTD4858NT4G TO2523 MOSFET Power Electronics Transistor for HighCurrent Switching Applications Single NChannel 25 V
Brand: onsemi
Price: 1 USD

China NTD4858NT4G TO-252-3 MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V wholesale

Brand Name : onsemi

Model Number : NTD4858NT4G

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 25 V

Current - Continuous Drain (Id) @ 25°C : 11.2A (Ta), 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 19.2 nC @ 4.5 V

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Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	11.2A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.2 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1563 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta), 54.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4858NT4G TO-252-3 MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V

NTD4858NT4G TO-252-3 MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V

NTD4858NT4G TO-252-3 MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V Images