FDP032N08B-F102 MOSFET Power Electronics
TO-220-3 Package Voltage High Current Applications N-Channel
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDP032N08B-F102 is a N-Channel Power MOSFET from Infineon Technologies. It is designed for use in DC/DC converters, motor control, and other power management applications. This device is available in a TO-220-3 package with three leads. This MOSFET is built using an advanced high-voltage technology.
It operates with a drain-source voltage (VDS) of 80V, an on-state resistance (RDS(on)) of 0.028Ω, and an Id of 82A. It offers a maximum drain current of 82A and a maximum drain-source on-state resistance of 0.028Ω. This MOSFET offers fast switching capabilities and superior avalanche ruggedness. It also provides improved thermal resistance, resulting in improved system efficiency. The FDP032N08B-F102 is RoHS compliant and halogen-free.
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FDP032N08B-F102 MOSFET Power Electronics TO-220-3 Package Voltage High Current Applications N-Channel Images
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