FDP045N10A-F102 MOSFET Power Electronics TO-220-3 High Current Applications N-Channel
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
FDP045N10A-F102 is a high-voltage, high-speed power MOSFET transistor in a TO-220-3 package. This device is designed for switching applications in switching power supplies, motor control, and other power switching applications. It has a drain-source voltage rating of 100V, a maximum drain current of 45A, and a maximum power dissipation of 75W.
It offers a fast switching speed of 10ns, a low gate-source capacitance of 6.5pF, and a low on-resistance of 0.0045ohm. This device is designed for low gate-charge and reverse body diode protection to enhance the switching performance. It is RoHS compliant, making it an ideal choice for power electronics applications.
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FDP045N10A-F102 MOSFET Power Electronics TO-220-3 High Current Applications N-Channel Images
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