Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities

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Shenzhen Sai Collie Technology Co., Ltd.

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Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities

Name: Semiconductor FDMC86261P UltraLow OnResistance Dual NChannel MOSFET with High Current and Power Density Capabilities
Brand: onsemi
Price: 1 USD

China Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities wholesale

Brand Name : onsemi

Model Number : FDMC86261P

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 150V

Current - Continuous Drain (Id) @ 25°C : 2.7A (Ta), 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 160mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 24 nC @ 10 V

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FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1360 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP (3.3x3.3)
Package / Case	8-PowerWDFN

Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities

Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities

Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities Images