FDMS86101DC MOSFET Power Transistor 8-PowerTDFN N-Channel Enhancement Mode
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDMS86101DC is an advanced N-Channel MOSFET Power Electronics device from Fairchild Semiconductor. It is packaged in a 8-PowerTDFN package.
The FDMS86101DC is designed to provide a high level of integration, low on-resistance and low gate charge. It is ideal for use in power switching applications, such as DC/DC converters and motor control applications.
The FDMS86101DC is a fully optimized solution with a wide range of features, including integrated gate protection, improved SOA performance and superior ESD protection. It also features a low-profile package design, making it suitable for space-constrained applications. Additionally, the FDMS86101DC is RoHS compliant and offers a wide range of operating temperatures from -55°C to 175°C.
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FDMS86101DC MOSFET Power Transistor 8-PowerTDFN N-Channel Enhancement Mode Images
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