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FDH055N15A MOSFET Power Electronics N-Channel TO-247-3 Package High Current Applications

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FDH055N15A MOSFET Power Electronics N-Channel TO-247-3 Package High Current Applications

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Brand Name : onsemi

Model Number : FDH055N15A

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1 - 3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 150V

Mounting Type : Surface Mount

Vgs (Max) : ±20V

Operating Temperature : -55°C ~ 150°C (TJ)

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FDH055N15A MOSFET Power Electronics N-Channel TO-247-3 Package High Current Applications

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.9mOhm @ 120A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9445 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
429W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-247-3
Package / Case

The FDH055N15A is an N-channel MOSFET power electronics device from Fairchild Semiconductor with a TO-247-3 package. It has a maximum drain source voltage of 550V and a maximum drain current of 55A. This MOSFET has a low on-resistance of 0.39 ohm, a low gate charge of 28.7 nC, and a fast switching speed of 30ns. It is designed for use in high power switching applications such as welding, motor control, and power factor correction. This device also features a low gate threshold voltage of 1.7V, ultra-low gate charge, and low capacitance. It is available in an environmentally friendly package and is RoHS compliant.

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FDH055N15A MOSFET Power Electronics N-Channel TO-247-3 Package High Current Applications


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